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A single-atom quantum memory in silicon

机译:硅中的单原子量子记忆

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摘要

Long coherence times and fast gate operations are desirable but oftenconflicting requirements for physical qubits. This conflict can be resolved byresorting to fast qubits for operations, and by storing their state in a`quantum memory' while idle. The $^{31}$P donor in silicon comes naturallyequipped with a fast qubit (the electron spin) and a long-lived qubit (the$^{31}$P nuclear spin), coexisting in a bound state at cryogenic temperatures.Here, we demonstrate storage and retrieval of quantum information from a singledonor electron spin to its host phosphorus nucleus in isotopically-enriched$^{28}$Si. The fidelity of the memory process is characterised via both stateand process tomography. We report an overall process fidelity of $F_p=$81${\pm}$7%, a memory fidelity ($F_m$) of over 90%, and memory storage timesup to 80 ms. These values are limited by a transient shift of the electron spinresonance frequency following high-power radiofrequency pulses.
机译:长相干时间和快速门操作是合乎需要的,但对物理量子位的要求经常相互矛盾。可以通过重新分配用于操作的快速量子位,以及在空闲时将其状态存储在“量子内存”中来解决此冲突。硅中的$ ^ {31} $ P供体自然配备有快速量子位(电子自旋)和长寿命量子位($ ^ {31} $ P核自旋),在低温下以束缚态共存。在这里,我们展示了在同位素富集的$ ^ {28} $ Si中从单供体电子自旋到其宿主磷核的量子信息的存储和检索。存储过程的保真度通过状态和过程层析成像来表征。我们报告的总体过程保真度为$ F_p = $ 81 $ {\ pm} $ 7%,内存保真度($ F_m $)超过90%,并且内存存储时间长达80毫秒。这些值受到高功率射频脉冲之后电子自旋共振频率的瞬态偏移的限制。

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